Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices

Abstract

We established a new method for evaluating quantitatively the silicon atomic displacement as a function of the depth from the surface induced by arsenic implantation into a silicon wafer. A simulation based on a convolution integral was developed successfully to reproduce the experimental depth profiles of isotopes in the arsenic-implanted 28Si/30Si isotope superlattices, from which the average distance of the silicon displacements due to the collisions with implanted arsenic is obtained. We show that it takes the average displacement of ∼0.5 nm to make the structure appear amorphous by transmission electron microscopy.