A novel Bulk-FinFET with dual-material gate

Abstract

A bulk-FinFET with dual material gate called DMG-Bulk-FinFET is proposed in this paper. Its characteristics are compared to the normal bulk-FinFET using 3-D simulations. It is demonstrated that the new structure has the features in suppressing the short channel effects, improving transconductance and enhancing the carrier transport efficiency. Moreover, these features can be optimized by engineering the gate length ratio and workfunction difference. This work illustrates the better performance of the DMG-Bulk-FinFET than its counterpart with single material gate and presents an optimization design of the DMG structure.