Applied Physics Letters · 1987 · 34 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionIii-v SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCarrier DynamicsCarrier Transport In Quantum WellsElectronic Energy LevelsMetalorganic Chemical Vapor DepositionMolecular Beam EpitaxyQuantizationQuantum Well Band StructureQuantum Well Structures
The effects of free-carrier broadening on luminescence linewidths in InGaAs-InP quantum wells (QW’s) are demonstrated using Schottky barrier depletion and magnetic field quantization of the conduction-band-energy levels. After removal of free-carrier broadening, linewidths of 5 meV for 100-Å, and 3.5 meV for 150-Å QW’s grown by metalorganic chemical vapor deposition are obtained. Widths of 3.4 meV for a 110-Å QW grown by molecular beam epitaxy (MBE) on an n+ substrate, and only 2.0 meV at 6.2 T for a similar MBE sample grown on a semi-insulating substrate are also reported.
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