An observation of proton-induced latchup (in CMOS microprocessor)

Abstract

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measured of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>