2012 · 26 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsRadiation ProtectionSemiconductor DevicesDevice ReliabilityHigh-dose Radiation EffectsMemory DevicesMemory Subsystem DesignRadiation HardeningRadiation SensitivityFlash Memory DevicesHeavy Ion RadiationIon Beam IrradiationIon Irradiation DamageIon SensitivityNand Flash MemoryNon-volatile Memory DesignRadiation Effects
16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
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Upgrades for the RADEF Facility
A. Virtanen, R. Harboe-Sørensen, Arto Javanainen et al. · 2007 · 36 citations
Annealing of Static data Errors in NAND-Flash memories
H. Schmidt, D. Walter, M. Brüggemann et al. · 2007 · 18 citations
Engineering, Computer Engineering, Electrical Engineering +16
Heavy ion SEE test of 2 Gbit DDR3 SDRAM
Martin Herrmann, Kai Grürmann, F. Gliem et al. · 2011 · 13 citations
Engineering, Computer Engineering, Electrical Engineering +17
Heavy ion SEE studies on 4-Gbit NAND-Flash memories
H. Schmidt, D. Walter, M. Brüggemann et al. · 2007 · 10 citations
Engineering, Computer Engineering, Electrical Engineering +17