Growth of hexagonal GaN films on the nitridated β‐Ga₂O₃substrates using RF‐MBE

Abstract

Abstract The growth of hexagonal GaN (h‐GaN) films on the nitridated β‐Ga 2 O 3 substrates using radio‐frequency. molecular beam epitaxy (RF‐MBE) was investigated. The β‐Ga 2 O 3 single crystal prepared by optical floating zone method was used to a substrate for GaN film growth, and nitridated by exposing to electron cyclotron resonance nitrogen plasma. It was found that h‐GaN layer is formed on the surface of β‐Ga 2 O 3 substrates by controlling the nitridation condition, and homo‐epitaxial growth of h‐GaN films was succesfully achieved by optimizing the RF‐MBE growth condition. The observation of cross‐sectional high‐resolution transmission electron microscopy indicated that obtained GaN films grown on these nitridated β‐Ga 2 O 3 substrates were of a high structural quality. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)