Comparison of nanoscale measurements of strain and stress using electron back scattered diffraction and confocal Raman microscopy

Abstract

Stresses in Si as small as 10 MPa have been measured using electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) with spatial resolutions of 10 nm and 100 nm, respectively. In both techniques, data were collected across wedge indentations in (001) Si. EBSD measured the stress and strain tensors and CRM measured the uniaxial stress. The results agreed very well except close to the indentation, where the surface-sensitive EBSD results indicated larger stresses. Results converged when the CRM laser excitation wavelength was reduced, probing smaller depths. The stress profiles are consistent with the inverse-square power law predicted by Eshelby analysis.