High <i>T</i> <i>c</i> Y-Ba-Cu-O thin films on Si substrates

Abstract

A low temperature process of vacuum codeposition at 550 °C was used to prepare superconducting Y-Ba-Cu-O thin films on Si substrates without a buffer layer. A zero resistance critical temperature Tce as high as 81.5 K was reached without further high-temperature post-annealing treatment. The surface morphology of films has a granular or porous character dependent on substrate temperature. The atomic emission spectroscopy shows the diffusion of Si from the substrate into the films at the level of several atomic percent.