Concepedia

Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

A. K. Tashatov, S. B. Donaev, B. B. Mavlyanov

Technical Physics · 2013 · 16 citations · 2 references

DOI

Concepts

Abstract

The energy band diagram of multilayer nanofilm systems formed on the basis of Si, GaAs, and CaF 2 is constructed. The optimal regimes of obtaining homogeneous films of a complex composition are determined.

References

2

Al-Ga disorder in Al<i>x</i>Ga1−<i>x</i>As alloys grown by molecular beam epitaxy

Robert C. Miller, Won T. Tsang · Applied Physics Letters · 1981 · 46 citations

, , +17

Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

E.U. Boltaev, A.A. Dzhurakhalov · Materials Science and Engineering B · 2003 · 24 citations

, , +17