Won T. Tsang

Growth characteristics of GaAs-Ga1−<i>x</i>Al<i>x</i>As structures fabricated by liquid-phase epitaxy over preferentially etched channels

D. Botez, Won T. Tsang, Shyh Wang · Applied Physics Letters · 1976 · 64 citations

Semiconductors, Materials Science, Electrical Engineering +14

Al-Ga disorder in Al<i>x</i>Ga1−<i>x</i>As alloys grown by molecular beam epitaxy

Robert C. Miller, Won T. Tsang · Applied Physics Letters · 1981 · 46 citations

Optical Materials, Engineering, Optoelectronic Devices +19

Ga&amp;lt;inf&amp;gt;0.47&amp;lt;/inf&amp;gt;In&amp;lt;inf&amp;gt;0.53&amp;lt;/inf&amp;gt;As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy

Won T. Tsang · IEEE Journal of Quantum Electronics · 1987 · 27 citations

Engineering, Laser Science, Laser Applications +21

Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices

D. Walrod, S. Y. Auyang, P. A. Wolff et al. · Applied Physics Letters · 1990 · 18 citations

Optical Pumping, Photonics, Optical Nonlinearities +12

Extrinsic photoluminescence from GaAs quantum wells

Robert C. Miller, A. C. Gossard, Won T. Tsang · Physica B+C · 1983 · 17 citations

Photoluminescence, Engineering, Physics +4