Applied Physics Letters · 2009 · 194 citations · 8 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsOptoelectronicsSemiconductor DevicesLight-emitting DiodesWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsElectron Escape DepthGallium Nitride Light-emitting DiodesLight-emitting Diode MaterialsSemiconductor Characterization
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Kenneth J. Vampola, Michael Iza, Stacia Keller, Steven P. DenBaars, Shuji Nakamura; Measurement of electron overflow in 450 nm InGaN light-emitting diode structures. Appl. Phys. Lett. 9 February 2009; 94 (6): 061116. https://doi.org/10.1063/1.3081059 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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Origin of efficiency droop in GaN-based light-emitting diodes
Minho Kim, M. Schubert, Qi Dai et al. · Applied Physics Letters · 2007 · 1.3K citations · Full text
Engineering, Electrical Engineering, Materials Engineering +17
Auger recombination in InGaN measured by photoluminescence
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