The influence of LPE growth techniques on the alloy composition of InGaAsP

Abstract

In experiments on the LPE growth of InGaAsP on (100) -InP substrates, it has been found that constant-composition epitaxial layers can be grown at constant temperature using the step-cooling technique, while the equilibrium-cooling, supercooling, and two-phase-solution techniques which involve growth under changing temperatures all result in grading of the alloy composition. The lattice constants and energy gaps of epitaxial layers grown using the step-cooling technique are independent of the amount of step cooling but are dependent on the growth temperature.