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Epitaxial Nature and Transport Properties in (LaBa)Co<sub>2</sub>O<sub>5+δ</sub> Thin Films
52
Citations
12
References
2009
Year
Materials ScienceEpitaxial NatureEpitaxial GrowthEngineeringOxide ElectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsCo2o5+δ Thin FilmsX-ray DiffractionThin Film Process TechnologyThin FilmsPulsed Laser DepositionMolecular Beam EpitaxyCo2o5+δ FilmThin Film Processing
Epitaxial (LaBa)Co2O5+δ thin films were grown on (001) LaAlO3 single-crystal substrates using pulsed laser deposition. Microstructure characterizations from X-ray diffraction and electron microscopy indicate that the films are highly c-axis oriented with cube-on-cube epitaxy. Transport property measurements indicate that the films have typical semiconductor behavior with a novel phase transition and hysteresis phenomena at 540 K. The chemical dynamic studies reveals that the resistance of the film changes drastically with the change of redox environment, i.e., the magnitude of resistance changes, ΔR = 1 × 102 ⇔ 1 × 106 Ω, is found within a short response time (∼700 ms). These phenomena suggest that the as-grown (LaBa)Co2O5+δ film have extraordinary sensitivity to reducing-oxidizing environment and the exceedingly fast surface exchange rate.
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