Applied Physics Letters · 1982 · 19 citations · 4 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCarrier TransportSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsSilicon MaterialsSurface PhysicsDispersive TransportElectrical PropertiesElectrical Properties AnalysisSiliconSilicon CharacterizationSilicon Electrical PropertiesSmall-angle X-ray ScatteringTotal Pressure
Electrical properties and x-ray small angle scattering have been measured on rf-sputtered Si:H alloys deposited at various hydrogen partial pressures of argon and hydrogen mixture gas with a constant total pressure. When the hydrogen partial pressure exceeds 40%, microcrystalline zone of about 200 Å in diameter is formed and photoexcited carriers show nondispersive transport, instead of dispersive transport which is typical of rf-sputtered a-Si:H.
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Microstructure of plasma-deposited a-Si : H films
J. C. Knights, R. Lujan · Applied Physics Letters · 1979 · 292 citations