Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

Abstract

Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.