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Charge-coupled image-sensing devices using three levels of polysilicon
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1974
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Electrical EngineeringPhotoelectric SensorCharge-coupled Image-sensing DevicesEngineeringSensorsMicrofabricationGood Transfer EfficiencyBioelectronicsApplied PhysicsArea-image SensorsThree-phase Polysilicon ApproachSensor DesignInstrumentationSensor ApplicationMicroelectronicsOptical SensorsSensor TechnologyImage Sensor
Charge-coupled linear and area-image sensors have been built using a three-phase polysilicon approach with overlapping electrodes in three levels of polysilicon. The structure has been found to relax the demands on photolithography and shows extremely good transfer efficiency.