An improved high frequency C-V method for interface state analysis on MIS structures

An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

Lewis M. Terman · Solid-State Electronics · 1962 · 1.4K citations

Electrical Engineering, Semiconductor Device, Engineering +7

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

R. Castagné, A. Vapaille · Surface Science · 1971 · 521 citations

Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes

Kimiyoshi Yamasaki, Minoru Yoshida, Takuo Sugano · Japanese Journal of Applied Physics · 1979 · 294 citations

Electrical Engineering, Engineering, Physics +14

Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP

A. Bath, P. J. van der Put, J. Schoonman et al. · Journal of Applied Physics · 1991 · 64 citations

Materials Science, Semiconductors, Electrical Engineering +14

Interface studies and electrical properties of plasma sulfide layers on <i>n</i>-type InP

P. Klopfenstein, G Bastide, M. Rouzeyre et al. · Journal of Applied Physics · 1988 · 50 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15