Interfacial reactions of Gd thin films on (111) and (001)Si

The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and <i>p</i>-type silicon

H. Norde, Jorge de Sousa Pires, F. M. d’Heurle et al. · Applied Physics Letters · 1981 · 164 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and structure of epitaxial Er silicide films on (111) Si

F. Arnaud d’Avitaya, A. Pério, J.C. Oberlin et al. · Applied Physics Letters · 1989 · 115 citations

Engineering, Materials Engineering, Materials Science +17

Thin films of rare earth metal silicides

Victor Belitsky · Thin Solid Films · 1986 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +12

Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers

J. Y. Duboz, P. A. Badoz, F. Arnaud d’Avitaya et al. · Physical review. B, Condensed matter · 1989 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Evolution of vacancy ordering and defect structure in epitaxial YSi2−<i>x</i> thin films on (111)Si

T. L. Lee, L. J. Chen, Fu‐Rong Chen · Journal of Applied Physics · 1992 · 37 citations

Natural Sciences, Materials Engineering, Materials Science +17