Aharonov–Bohm-type Effects in Triangular Antidot Lattice

Abstract

Three kinds of Aharonov–Bohm (AB)-type oscillation have been investigated in triangular antidot lattice fabricated from a GaAs/AlGaAs two-dimensional electron gas sample. The oscillation periods of Altshuler–Aronov–Spivak (AAS) effect and AB-type effect near zero magnetic field are determined by the unit cell area, whereas those of AB-type oscillations in the quantum Hall plateau transition regime are governed by the effective area of antidot. The evolution of the high-field AB-type oscillation as a function of gate voltage gives infomation on the profile of the self-consistent potential associated with compressible edge channels formed around antidot. The temperature dependences and decoherence mechanisms of the AAS and AB-type oscillations near zero magnetic field as well as the high-field AB-type oscillation are discussed.