The effect of local polarized domains of ferroelectric P(VDF/TrFE) copolymer thin film on a carbon nanotube field-effect transistor

Abstract

We produced local polarized domains of ferroelectric P(VDF/TrFE) copolymer thin films on a carbon nanotube field-effect transistor (CN-FET) channel by atomic force microscopy (AFM). The drain current versus gate voltage (I(d)-V(g)) curves measured after forming the local polarized domains showed a shift in the threshold voltages. We also found that the amount of the shifts in the threshold voltages gradually decreased during the measurement of this characteristic over 100 h after forming the polarized domains. The mechanisms of the shifts in the threshold voltages and their decreasing behaviour were explained in terms of the excessive charges that were induced upon the formation of the polarized domains.