Applied Physics Letters · 1997 · 59 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsOptical SourcesQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresElectroluminescenceMolecular Beam EpitaxyPower OutputQuantum Cascade StructuresQuantum Well HeterostructuresQuantum Well Light-emitting DiodesQuantum Well StructuresType-ii Quantum Wells
Interband cascade electroluminescence in the 5–8 μm spectrum region is observed from a staircase of Sb-based type-II quantum well structures. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 15 periods of active regions separated by digitally graded multilayer injection regions. The device has been operated at 300 and 77 K with an output optical power up to 700 nW. The strong blue shift of the electroluminescent peak with the applied bias due to the Stark effect has also been observed.
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