A universal damage induced technique for quantum well intermixing

Abstract

We report a novel technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems. The technique involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal. The deposition process appears to generate point defects at the sample surface, leading to an enhanced intermixing rate and a commensurate reduction in the required anneal temperature. Using appropriate masking it is possible to completely suppress the intermixing process, enabling large differential band gap shifts (over 100 meV) to be obtained across a single wafer.