Detection of defect-free zones in annealed Czochralski silicon with synchrotron section topography

Abstract

High-resolution, rapid synchrotron x-ray topography is used to study oxygen-induced microdefects and their spatial distribution in a large number of (100) n-type silicon wafers, which had undergone different two-stage thermal anneals. Section topographs reveal a 40–60-μm-thick defect-free zone on the surface of a wafer annealed first at 800 °C for 20 h and then at 1150 °C for 4 h.