High-Temperature Growth of Silica Sheathed Bi2S3 Semiconductor Nanowires

Abstract

Silica-sheathed Bi2S3 nanowires (that prefer to grow along the c-axis) and monoliform nanowires, have been grown on Si(001) substrates using one-step atmospheric pressure CVD with BiCl3 and sulfur precursors. The mechanisms concerning the stable chemical species (Bi2S3, silica) formed in the reaction atmosphere, the preferred growth direction (the c-axis) of the Bi2S3 nanowires, and the formation of the silica sheaths are discussed using the thermodynamic data and the crystal structure of Bi2S3.