Cyclotron Resonance Experiments in Silicon and Germanium

Abstract

Experimental techniques are described for cyclotron resonance in silicon and germanium at 9000 Mc/sec, 24 000 Mc/sec, and higher frequencies. Results are presented for electrons and holes in both germanium and silicon. The parameters for the heavy holes are evaluated, with corrections from an approximate theory of line shape for warped surfaces. Observations of the harmonics of cyclotron resonance of the heavy holes in germanium and silicon are described.