Electrical Properties of Polycrystalline Silicon MOSFETs on Glass

Abstract

The growth and electrical properties of polycrystalline silicon films on glass have been studied. Polycrystalline silicon films can be formed by conventional e-gun evaporation at a temperature below 550°C in high vacuum (1×10 -6 Torr). Both N-channel and P-channel MOSFETs have been fabricated using e-gun evaporated polycrystalline silicon films. These MOSFETs are operating in the enhancement mode and they have field effect mobilities more than 10 cm 2 /V·sec. Simple integrated circuits for a 21-stage ring oscillator have been operating in N-channel devices and in P-channel devices. Propagation delay time and power dissipation are 181 nsec and 1.1 mW, respectively, at 30 V supply voltage in the N-channel devices.