Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlattices

Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structures

Ronald L. Greene, K. K. Bajaj · Solid State Communications · 1983 · 262 citations

Natural Sciences, Materials Science, Physics +14

Conduction mechanism in low-resistivity <i>n</i>-type ZnSe prepared by organometallic chemical vapor deposition

W. Stutius · Journal of Applied Physics · 1982 · 63 citations

Engineering, Materials Engineering, Materials Science +17

Recent developments in the MOVPE of II–VI compounds

J.B. Mullin, S.J.C. Irvine, J. Giess et al. · Journal of Crystal Growth · 1985 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +9

Optical and electrical properties of PbTe-Pb1−xSnxTe superlattices prepared on KC1 by a HWE

H. Fujiyasu, Akihiro Ishida, H. Kuwabara et al. · Surface Science · 1984 · 36 citations

Natural Sciences, Materials Science, Physics +14

Excitonic and time-resolved edge emissions of iodine-doped cubic ZnS crystals excited by an excimer laser

Tsunemasa Taguchi, Toshiya Yokogawa, Hayato Yamashita · Solid State Communications · 1984 · 29 citations

Natural Sciences, Materials Science, Physics +15