Journal of the American Chemical Society · 2003 · 336 citations · 32 references
Natural SciencesChemistryMaterials ScienceSurface ChemistrySurface ScienceThin FilmsNanostructured SurfacesSemiconductor SurfacesSilicon MaterialsSurface CrystallographySurface PhysicsThin-film MaterialsComprehensive CoverageMonolayer FilmsNative Oxide LayersReflectivitySilicon DioxideSilicon Surface ScienceSilicon Thin FilmsX-ray Reflectivity
A new method is described to prepare strongly bonded, compact monolayer films of alkyl- or arylphosphonates on the native oxide surface of Si (SiO(2)/Si). This method is illustrated for octadecyl- and alpha-quarterthiophene-2-phosphonates. For both cases, AFM shows comprehensive coverage of the SiO(2)/Si surface. The thickness of the continuous film of 4TP/SiO(2)/Si was measured both by AFM and by X-ray reflectivity to be ca. 18 A. Direct gravimetric analysis shows surface coverage by alpha-quarterthiophene-2-phosphonate to be about 0.66 nmol/cm(2), which corresponds to molecular packing in the film close to that of crystalline alpha-quarterthiophene. Coverage by octadecylphosphonate was ca. 0.90 nmol/cm(2), corresponding to a cross-sectional area of about 18.5 A(2)/molecule, consistent with close-packed alkyl chains.
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Insoluble monolayers at liquid-gas interfaces
Jerome Daen · Journal of Colloid and Interface Science · 1966 · 2.6K citations
Natural Sciences, Chemistry, Physics +14
Ideal hydrogen termination of the Si (111) surface
G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations