IEEE Photonics Technology Letters · 1994 · 82 citations · 8 references
Wide-bandgap SemiconductorEngineeringLaser ScienceLaser ApplicationsSuper-intense LasersGainassb WellsHigh-power LasersLaser ControlOptical AmplifierAlgaassb BarriersSemiconductor Lasers/Spl Mu/mOptical PumpingPhotonicsElectrical EngineeringPhysicsLaser Design/Spl Sim/1.9 μMApplied PhysicsHigh-energy LasersQuantum Photonic DeviceOptoelectronics
High-power diode lasers emitting at /spl sim/1.9 μm have been fabricated from a quantum-well heterostructure having an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. For devices 300 μm wide and 1000 μm long, single-ended output power as high as 1.3 W cw has been obtained with an initial differential quantum efficiency of 47%. The pulsed threshold current density is as low as 143 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for 2000-μm-long devices.
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InGaAs/InGaAsp/InP strained-layer quantum well lasers at ~2 μm
Siamak Forouhar, A. Ksendzov, Anders Larsson et al. · Electronics Letters · 1992 · 80 citations