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Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
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1988
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EngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic DevicesSurface-emitting LasersThreshold CurrentsHigh-power LasersSemiconductor LasersIngasbas/gaalsbas Injection HeterostructuresRoom-temperature Cw LasingPhotonicsPhotoluminescenceContinuous-wave LasingLaser ClassificationRoom TemperatureStripe GeometryApplied PhysicsOptoelectronics
Room-temperature cw lasing was achieved in InGaSbAs/GaAlSbAs heterostructure injection lasers emitting in the range 2.2–2.4 μm. A stripe geometry with a ridge waveguide was used. The threshold currents in the cw regime were 80–150 mA at T = 300 K.