Charge Collection Microscopy on p ‐ WSe2: Recombination Sites and Minority Carrier Diffusion Length

Abstract

Charge collection (EBIC) microscopy of the layered semiconductor is reported. Steps on the surfaces of layered material, bulk dislocations, and growth irregularities are identified as recombination sites. The minority carrier diffusion length perpendicular to the layer structure is determined to be on a smooth surface. The results demonstrate a correlation between step‐like surface structures and loss of current collection efficiency in solar energy converting devices made from layered semiconductors.