IEEE Electron Device Letters · 2012 · 69 citations · 11 references
EngineeringMaterials EngineeringMaterials ScienceEnergy MaterialsHeat TransferSemiconductor DevicesHeat ConductionNanowiresSemiconductor Device MaterialsThermal ManagementThermal Properties Of SemiconductorsThermoelectric MaterialsMaximum OutputMaximum Power OutputNanowire DevicesNanowire ThermoelectricsOpen-circuit VoltagePower OutputSilicon NanowiresThermoelectric Energy Conversion
This letter demonstrates two-orders-of-magnitude enhancement in the performance of recently reported vertical silicon nanowire (SiNW)-based thermoelectric power generators (TEGs) by optimizing the filling material. As compared to SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> in the earlier work, the new device uses polyimide as filling material, which provides low parasitic thermal conduction and also reduces the damage to the nanowire tips. Consequently, an open-circuit voltage of 27.9 mV, a short-circuit current of 67 μA (both improved by ~ 17 ×), and a maximum power output of 0.47 μW (improved by ~ 313 ×) were obtained under a temperature difference of 70 K across the experimental setup. The reported improvements bring SiNW-TEGs a step closer to be used as a miniaturized clean energy source.
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