Concepedia

Defect passivation in strain engineered InAs/(InGa)As quantum dots

S. Mazzucato, D. Nardin, M. Capizzi, A. Polimeni, A. Frova, L. Seravalli, S. Franchi

Materials Science and Engineering C · 2005 · 42 citations · 12 references

DOI

Concepts

References

12

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan · Journal of Applied Physics · 2001 · 7.1K citations

, , +13

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

, , +4

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 758 citations

, , +19

The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures

G.T. Liu, A. Stintz, H. Li et al. · IEEE Journal of Quantum Electronics · 2000 · 156 citations

, , +14

High-power quantum-dot lasers at 1100 nm

F. Heinrichsdorff, Ch. Ribbat, Marius Grundmann et al. · Applied Physics Letters · 2000 · 115 citations

, , +20