Japanese Journal of Applied Physics · 1994 · 56 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureSurface ScienceThin FilmsElectrode MaterialsFerroelectric CeramicsPerovskite MaterialsSemiconductor SurfacesSurface Chemistry Of SolidsSurface PhysicsCrystal Surface MorphologyDiffraction AnalysisEnergy Dispersive X-ray SpectroscopyEnergy-dispersive X-ray SpectroscopyLead Zirconate TitanateRapid Thermal AnnealingSol-gel ProcessingThermal Annealing
Surface morphology of lead-zirconate-titanate [PZT(52/48)] thin films prepared by sol-gel processing on Pt/Ti/ SiO 2 /Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal structure of the rosette was identified as perovskite and that of the other area was nonperovskite, by electron diffraction analysis. Lead deficiency in the non-perovskite phase caused by lead diffusion into the bottom electrode was detected by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. In order to prepare PZT films with a smooth surface, the following four means were efficient: addition of lead excess, rapid thermal annealing (RTA), adoption of buffer layer, and preparation of crystal nucleus on the substrate.
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J. F. Scott, Carlos A. Paz de Araújo · Science · 1989 · 3.8K citations
Natural Sciences, Electrical Engineering, Materials Science +17
J. B. Blum, S. R. Gurkovich · Journal of Materials Science · 1985 · 242 citations