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Low voltage electron beam lithography in self-assembled ultrathin films with the scanning tunneling microscope
111
Citations
6
References
1994
Year
EngineeringElectron-beam LithographyMicroscopyResist LayerLithographic PatterningOptoelectronic DevicesElectronic DevicesTunneling MicroscopyBeam LithographyNanoelectronicsBenzyl ChlorideTunneling MicroscopeNanolithography MethodMaterials ScienceNanotechnologyOptoelectronic MaterialsMicroelectronicsSurface NanoengineeringElectronic MaterialsMicrofabricationScanning Probe MicroscopySurface ScienceApplied PhysicsNanofabricationThin FilmsSelf-assembled Ultrathin Films
With a scanning tunneling microscope (STM) operating in vacuum, we have studied the lithographic patterning of self-assembling organosilane monolayer resist films. Where the organic group is benzyl chloride, the resist layer can be patterned with electrons down to 4 eV in energy. The patterned films have been used as templates for the electroless plating of thin Ni films. Linewidths down to ∼20 nm have been observed in scanning electron micrographs of the plated films. Still smaller features are observed in STM images of the exposed organosilane films.
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