Physical Review Letters · 2005 · 185 citations · 9 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor MaterialsSpectroscopyElectronic SpectroscopyNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesSpin DynamicsElectron Spin RelaxationFaraday RotationLandé G-factorNoise SpectroscopyPoisson DistributionRelaxation Time MeasurementsSpin Dynamics In SemiconductorsSpin Noise
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
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