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Improved MBE Growth Of InGaAs-InAlAs Heterostructures For High-Performance Device Applications

DOI

10

Citations

0

References

1989

Year

Yung-Chung Kao, Alan Seabaugh, H. Y. Liu, T. S. Kim, Mark A. Reed, P. Saunier, B. Bayraktaroglu, W. M. Duncan
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Abstract

In this paper, we report the improvements in structural quality of the InGaAs-InAlAs heterostructures grown on InP by molecular beam epitaxy (MBE). The effect of heteroepitaxial growth parameters on modulation-doped n-InAlAs/InGaAs-InP structures is examined by Hall measurement. Practical growth conditions have been developed for device fabrication. Low-temperature (4.2 K) magnetotransport measurement and resonant tunneling spectroscopy are used to characterize the modulation-doped structures and resonant tunneling barrier structures, respectively. Both measurements indicate the high quality of the heterostructures. Barrier height effect on resonant tunneling diode structures is discussed. InAlAs-InGaAs heterojunction bipolar transistors (HBTs) and high-electron-mobility transistors (HEMTs) have been successfully fabricated on InP in this work.