All-Metal-Nitride RRAM Devices

Abstract

This letter presents the novel CMOS-compatible all-metal-nitride resistive random access memory (RRAM) devices based on the TiN/AlN/TiN stack. The device has low operation current <;100 μA, retention of > 3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s at 150 °C, and ac endurance of up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> Hz. The device switch characteristics are found to agree with the filamentary switch mechanism. In addition, the RRAM devices built with an additional hafnium nitride capping layer have showed less switch voltage variations and stable switch characteristics.