Thickness dependence of critical current density in GdBa2Cu3O7−δ thin films with BaSnO3 addition

Abstract

We investigated influence of 4 wt. % BaSnO3 (BSO) addition on the thickness dependence of critical current density (Jc) of GdBa2Cu3O7−δ (GdBCO) thin films deposited by using the pulsed laser deposition technique. The results show that Jc measured at 77 K of the GdBCO films is significantly enhanced by the addition of BSO. Thickness dependence of self-field Jc in the BSO doped GdBCO films is reduced in comparison with that of pure GdBCO films. Improved field performance of Jc is also observed for the BSO-doped GdBCO films up to thickness of 1.5 μm. The enhancements are attributed to the growth of artificial pinning centers in the form of BSO nano precipitates confirmed by the cross-sectional transmission electron microscopy images.