Accelerated RF life Testing of Gan Hfets

Abstract

This work reports the results of the first three temperature accelerated RF life test on millimeter-wave GaN heterostructure field effect transistors (HFETs) at 10 GHz. 2times100 mum transistors were stressed at 2 dB compression with a pre RF bias condition of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> = 100 mA/mm and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> = 25 V. The three channel temperatures used in study were 285 degC, 315 degC and 345 degC. An activation energy of 1.80 eV was extracted giving a MTTF at T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ch</sub> = 125 degC of 3.5times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> hours.