Effect of low constant current stress treatment on the performance of the Cu/ZrO₂/Pt resistive switching device

Abstract

In this paper, the effect of a low constant current stress (CCS) treatment on the performance of a Cu/ZrO2/Pt resistive switching device is investigated. The conductance of the device increases about two orders of magnitude after CCS treatment, indicating that some defects are introduced into the ZrO2 matrix and the CCS treatment can be regarded as an electrical doping process. Benefiting from these introduced defects, better resistive switching performance is obtained after CCS treatment, including low forming voltage, low reset current, uniform resistive switching and good endurance characteristics.