Optical characterization of crystalline silicon embedded in a‐Si matrix

Abstract

The photoluminescence of pure amorphous Si films and films with embedded Si quantum dots and large nano-crystallites is correlated with XRD and AFM measurements. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.18 and 1.39 eV have been revealed in studied samples. The 0.90–0.98 eV PL bands are attributed to band tail luminescence in Si nano-crystallites. Concurrently, the 1.18 and 1.39 eV PL bands are assigned to radiative transitions between quantum confined levels within Si quantum dots embedded into a-Si matrix. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)