A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)

Abstract

A physical model is presented which quantitatively describes the threshold voltage instability, commonly known as drift, in n-channel Si/sub 3/N/sub 4/-gate pH ISFET's. The origin of the so-called drift is postulated to be associated with the relatively slow conversion of the silicon nitride surface to a hydrated SiO/sub 2/ or oxynitride layer. The rate of hydration is modeled by a hopping and/or trap-limited transport mechanism known as dispersive transport. Hydration leads to a decrease in the overall insulator capacitance with time, which gives rise to a monotonic temporal increase in the threshold voltage.