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Nucleation of Microcrystallites in Phosphorus-Doped Si:H Films
33
Citations
10
References
1981
Year
Materials ScienceSemiconductorsOptical MaterialsEngineeringH NetworkCrystalline DefectsSurface ScienceApplied PhysicsSemiconductor MaterialSemiconductor Device FabricationGlow Discharge TechniqueThin FilmsSilicon On InsulatorH FilmsAmorphous SolidThin Film Processing
Structural properties of partially crystallized Si:H films prepared by glow discharge technique have been studied by Raman scattering and optical absorption spectra. The structure of the Si:H films is found to be a mixture of microcrystalline and amorphous phases. The volume fraction of a microcrystalline part in the Si:H network was determined to be 0.37–0.58 on the basis of the effective-medium theory.
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