Japanese Journal of Applied Physics · 1981 · 33 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials PhysicsSemiconductor MaterialsThin FilmsAmorphous MaterialsAmorphous SolidsDopingOptical Properties Of SolidsSemiconductor PhysicsSilicon MaterialsAbsorption SpectraAmorphous StructureEffective Medium TheoriesGlow Discharge TreatmentOptical AbsorptionOptical Absorption SpectraSiliconSilicon Thin Films
Structural properties of partially crystallized Si:H films prepared by glow discharge technique have been studied by Raman scattering and optical absorption spectra. The structure of the Si:H films is found to be a mixture of microcrystalline and amorphous phases. The volume fraction of a microcrystalline part in the Si:H network was determined to be 0.37–0.58 on the basis of the effective-medium theory.
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The Electrical Resistance of Binary Metallic Mixtures
Rolf Landauer · Journal of Applied Physics · 1952 · 1.9K citations
Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors
J.E. Smith, M. H. Brodsky, B. L. Crowder et al. · Physical Review Letters · 1971 · 379 citations
Low-temperature crystallization of doped <i>a</i>-Si:H alloys
Toshihiko Hamasaki, Hiroyuki Kurata, M. Hirose et al. · Applied Physics Letters · 1980 · 129 citations
Natural Sciences, Materials Engineering, Materials Science +15