Applied Physics Letters · 2002 · 131 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDetector TechnologyInfrared DetectorsOptical DetectorsPhotodetectorsSemiconductor DetectorsSemiconductor PhysicsHeterostructure PhotodetectorsInfrared PhotodetectorsMolecular Beam EpitaxyPhotoconductive Infrared DetectorsPhotovoltaic Infrared DetectorsReverse Bias CharacteristicsSemiconductor Infrared MaterialsTemperature Dependence
We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010 cm Hz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.
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High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
F. Fuchs, U. Weimer, W. Pletschen et al. · Applied Physics Letters · 1997 · 213 citations