Thermal expansion of bulk and homoepitaxial GaN

Abstract

The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated. Within the experimental accuracy, mean values were extracted for the temperature ranges 12–100, 100–250, and 250–600 K. These values are essential, especially, for the interpretation of measurements of other GaN properties performed at low temperatures.