Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

Abstract

The saturation drain current and the gate saturation transconductance for AlGaN/GaN on silicon (1 1 1) high-electron mobility transistors (HEMTs) have been experimentally investigated in the temperature range of 25–300 °C. An analytical physical-based closed-form is proposed for modeling the gate transconductance taking into account the polar-optical phonon scattering of the electrons in the two-dimensional electron gas HEMT channel. It is suggested that the experimental temperature dependence of T−1.1 is due to the electron channel mobility dependence coupled with the effect of the access resistances and the channel self-heating due to power dissipation.