Reduced power consumption in GaAs-based bipolar cascade lasers

Abstract

A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n+ and p+ regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.