Radiation effects on semiconductor devices

Abstract

The radiation-induced degradation of semiconductor material parameters is reviewed. These results are related to the degradation of semiconductor-device performance. Design techniques for minimizing the radiation-induced degradation are evaluated. Emphasis is placed on the effects of neutron-produced displacement damage on devices and on the effects of ionizing radiation on MOS structures. Transient ionization effects and circuit latchup are considered. The present degree of understanding of radiation effects in silicon devices is summarized.