Interfacial Trap Density‐of‐States in Pentacene‐ and ZnO‐Based Thin‐Film Transistors Measured via Novel Photo‐excited Charge‐Collection Spectroscopy

Abstract

Direct quantitative mapping of the density-of-states, named the photo-excited charge-collection technique, for the interface traps at the n-ZnO and/or p-pentacene thin-film transistor channel is implemented by using monochromatic photons which are carried by optical fibers and are probed onto thin-film transistors.